SRA:Spreading Resistance Analysis
Features
SRA, also known as spreading resistance profiling (SRP), is a method in which the sample is obliquely polished at a small angle and two tungsten carbide probes are then brought into contact with the polished surface to measure the resistivity versus depth by lateral scanning. The features are:
- Identification of semiconductor carrier type (p or n).
- Carrier concentration depth profile.
- Carrier concentration range of approximately 2×1013 to 2×1020 cm-3.
- Capable of measuring samples with patterns larger
than approximately 20μm×100μm.
- Activation rate determined by combination with secondary ion mass spectrometry (SIMS).
Application Examples
- Activation rate of ion-implanted samples after heat treatment.
- Diffusion layers and epitaxial layers of MOS devices.
- Auto-doping of epitaxial layers.
- Carrier concentration distribution in insulated gate bipolar transistors (IGBT) under forward bias.
Principle of operation
The two probes are brought into contact with the sample surface that has been obliquely polished, and the electrical resistance immediately below them is measured.By comparing with the measured value of the calibration standard sample, the measured spreading resistance is converted into specific resistance 𝜌(Ω・cm).The carrier concentration(cm3)is calculated using the Thurber curve, which shows the relationship between the specific resistance and the carrier concentration N:
Data examples
The bar above the graph in Figure 2 shows the sample’s layer structure with p and n carriers indicated by pink and green, respectively. File and sample name are shown at the top. Probe load (unit: g), sinθ (θ is the abrasion bevel angle), crystal face direction, and the probe scanning step (μm) are shown below the graph.
Data format of deliverables
- PDF file
- Profile viewer (.PRW, software provided by MST)
- Excel file numerical data
Specifications
Items for enquiries
- Purpose and scope of the analysis
- Sample information
- Number of samples, availability of preliminary samples.
- Analysis depth, carrier type, sample dimensions, thin film structure including film thicknesses, crystalline plane orientation, presence/absence of laminated film and/or patterned films.
- Dimensions and position of region of interest (ROI).
- Additional notes.
- Expected arrival date of sample(s) and shipping method.
- Desired delivery dates of preliminary and final results.
- Additional notes.
- Other relevant information
Caution
- The depth resolution may be reduced due to sample surface roughness.
- Prior consultation with MST is recommended for measurements of chips and patterned samples.
- The analysis is destructive, and sample remains will not be returned.
- Quantifiable materials are Si and Ge only.
[SRA]広がり抵抗測定法の分析事例はこちらからご覧ください。